UV Detector based on InAlN/GaN-on-Si HEMT Stack with Photo-to-Dark Current Ratio > 107

TL;DR

This paper presents a highly sensitive UV detector based on InAlN/GaN-on-Si HEMT technology, achieving a photo to dark current ratio exceeding 10^7, with detailed fabrication and performance analysis.

Contribution

The work introduces a novel InAlN/GaN-on-Si HEMT UV detector with record-high photo to dark current ratio and detailed insights into its gain mechanism and transient response.

Findings

Photo to dark current ratio > 10^7 at 5 V bias

Spectral responsivity of 34 A/W at 367 nm

Dark current less than 32 pA at 5 V

Abstract

We demonstrate an InAlN/GaN-on-Si HEMT based UV detector with photo to dark current ratio > 107. Ti/Al/Ni/Au metal stack was evaporated and rapid thermal annealed for Ohmic contacts to the 2D electron gas (2DEG) at the InAlN/GaN interface while the channel + barrier was recess etched to a depth of 20 nm to pinch-off the 2DEG between Source-Drain pads. Spectral responsivity (SR) of 34 A/W at 367 nm was measured at 5 V in conjunction with very high photo to dark current ratio of > 10^7. The photo to dark current ratio at a fixed bias was found to be decreasing with increase in recess length of the PD. The fabricated devices were found to exhibit a UV-to-visible rejection ratio of >103 with a low dark current < 32 pA at 5 V. Transient measurements showed rise and fall times in the range of 3-4 ms. The gain mechanism was investigated and carrier lifetimes were estimated which matched well with those reported elsewhere.