Signature of growth-deposition technique on the properties of PECVD and thermal SiO2

TL;DR

This paper compares PECVD and thermal growth methods for silicon dioxide, highlighting how process differences influence nano-porous structures, surface properties, and electrical characteristics, with implications for tunable conductivity applications.

Contribution

It provides a detailed analysis of how PECVD and thermal processes uniquely affect SiO2 properties, revealing process-dependent nano-pore arrangements and their impact on material behavior.

Findings

Porosity and nano-pore arrangements differ between PECVD and thermal SiO2.

Surface roughness and refractive index are process-dependent.

Metal-filled nano-porous oxides exhibit tunable conductivity.

Abstract

In this article, we report the process induced variation in the characteristics of PECVD deposited and thermally grown silicon dioxide (SiO2) thin film. We find key differences in the porosity, arrangement of the nano-pores, surface roughness, refractive index and electrical resistivity of the SiO2 thin films obtained by the two methods. While the occurrence of the nanoporous structure is an inherent property of the material and independent of the process of film growth or deposition, the arrangements of these nano-pores in the oxide film is process dependent. The distinct arrangements of the nano-pores are signatures of the deposition/growth processes. Morphological analysis has been carried out to demonstrate the difference between oxides either grown by thermal oxidation or through PECVD deposition. The tunable conductive behavior of the metal filled nano-porous oxides is also demonstrated, which has potential to be used as conductive oxides in various applications.