Large-gap magnetic topological heterostructure formed by subsurface incorporation of a ferromagnetic layer
Toru Hirahara, Sergey V. Eremeev, Tetsuroh Shirasawa, Yuma Okuyama,, Takayuki Kubo, Ryosuke Nakanishi, Ryota Akiyama, Akari Takayama, Tetsuya, Hajiri, Shin-ichiro Ideta, Masaharu Matsunami, Kazuki Sumida, Koji Miyamoto,, Yasumasa Takagi, Kiyohisa Tanaka, Taichi Okuda

TL;DR
This study demonstrates a self-assembled magnetic heterostructure that induces a sizable Dirac gap and ferromagnetism at room temperature, potentially enabling high-temperature quantum anomalous Hall effects for advanced topological devices.
Contribution
It introduces a novel MnBi2Se4/Bi2Se3 heterostructure formed by subsurface incorporation, showing room-temperature ferromagnetism and a significant Dirac gap without external doping or proximity effects.
Findings
Ferromagnetism persists up to room temperature.
A Dirac gap of approximately 100 meV is observed.
The heterostructure exhibits a nontrivial Chern number C = -1.
Abstract
Inducing magnetism into topological insulators is intriguing for utilizing exotic phenomena such as the quantum anomalous Hall effect (QAHE) for technological applications. While most studies have focused on doping magnetic impurities to open a gap at the surface-state Dirac point, many undesirable effects have been reported to appear in some cases that makes it difficult to determine whether the gap opening is due to the time-reversal symmetry breaking or not. Furthermore, the realization of the QAHE has been limited to low temperatures. Here we have succeeded in generating a massive Dirac cone in a MnBi2Se4 /Bi2Se3 heterostructure which was fabricated by self-assembling a MnBi2Se4 layer on top of the Bi2Se3 surface as a result of the co-deposition of Mn and Se. Our experimental results, supported by relativistic ab initio calculations, demonstrate that the fabricated MnBi2Se4 /Bi2Se3…
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