Silicon-Oxide Interfaces: Structure and Electronic Properties
Y. G. Fedorenko
TL;DR
This paper reviews methods for studying the structure and electronic properties of silicon-oxide interfaces, focusing on interface states, charge trapping, and structural defects relevant to semiconductor device performance.
Contribution
It provides a comprehensive overview of experimental and theoretical approaches to analyze Si/SiO2 interface properties and defects, highlighting recent advancements.
Findings
Identification of key interface defects affecting electronic properties
Summary of methods for analyzing charge trapping phenomena
Overview of structural defect types at Si/SiO2 interfaces
Abstract
The paper reviews methods used to study the electronic and structural properties of silicon/insulator interfaces. Methodological approaches to study the interface states and charge trapping in the oxide are considered. An overview of archetypical structural defects of the Si/SiO2 interface is given.
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Taxonomy
TopicsSemiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Integrated Circuits and Semiconductor Failure Analysis