Modelling of field-effect transistors based on 2D materials targeting high-frequency applications

TL;DR

This paper develops models and simulation tools for graphene and 2D material-based field-effect transistors to advance high-frequency electronics, addressing design, performance prediction, and benchmarking for future communication technologies.

Contribution

It introduces comprehensive models and tools for the design, simulation, and benchmarking of 2D material-based FETs, facilitating technological control and high-frequency application development.

Findings

Models enable performance prediction of graphene FETs

Tools assist in circuit design and RF performance assessment

Benchmarking shows potential advantages over existing technologies

Abstract

New technologies are necessary for the unprecedented expansion of connectivity and communications in the modern technological society. The specific needs of wireless communication systems in 5G and beyond, as well as devices for the future deployment of Internet of Things has caused that the International Technology Roadmap for Semiconductors, which is the strategic planning document of the semiconductor industry, considered since 2011, graphene and related materials (GRMs) as promising candidates for the future of electronics. Graphene, a one-atom-thick of carbon, is a promising material for high-frequency applications due to its intrinsic superior carrier mobility and very high saturation velocity. These exceptional carrier transport properties suggest that GRM-based field-effect transistors could potentially outperform other technologies. This thesis presents a body of work on the modelling, performance prediction and simulation of GRM-based field-effect transistors and circuits. The main goal of this work is to provide models and tools to ease the following issues: (i) gaining technological control of single layer and bilayer graphene devices and, more generally, devices based on 2D materials, (ii) assessment of radio-frequency (RF) performance and microwave stability, (iii) benchmarking against other existing technologies, (iv) providing guidance for device and circuit design, (v) simulation of circuits formed by GRM-based transistors.