Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
Lorenzo Baldrati, Andrew Ross, Tomohiko Niizeki, Christoph Schneider,, Rafael Ramos, Joel Cramer, Olena Gomonay, Mariia Filianina, Tatiana, Savchenko, Daniel Heinze, Armin Kleibert, Eiji Saitoh, Jairo Sinova, Mathias, Kl\"aui

TL;DR
This study measures the three-dimensional angular dependence of spin Hall magnetoresistance in epitaxial NiO(001)/Pt thin films, revealing insights into antiferromagnetic spin transport and domain behavior without ferromagnetic elements.
Contribution
It provides the first detailed 3D angular dependence of SMR in NiO/Pt bilayers and models the domain redistribution effects influencing the SMR signal.
Findings
SMR observed between 1 and 3 T without saturation up to 11 T
Reversible field-induced redistribution of antiferromagnetic domains explains angular dependence
Estimated spin mixing conductance exceeds 2×10^{14} Ω^{-1} m^{-2}
Abstract
We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. The three-dimensional angular dependence of the SMR can be explained by a model considering the reversible field-induced redistribution of magnetostrictive antiferromagnetic S- and T-domains in the…
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