Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene

TL;DR

This study investigates how temperature influences universal conductance fluctuations in graphene, revealing that lower temperatures enhance conductance fluctuations due to reduced dephasing, consistent with weak localization theory.

Contribution

It demonstrates that the temperature dependence of UCF in graphene can be explained by weak localization effects, extending previous understanding of quantum interference phenomena.

Findings

Conductance fluctuation amplitude increases as temperature decreases.

Reduced inelastic scattering enhances weak localization correction.

Temperature dependence of UCF aligns with WL theory in graphene.

Abstract

The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Following a previous report that explained the relationship between the universal conductance fluctuation (UCF) and WL regarding the gate voltage dependence (D. Terasawa, et al., Phys. Rev. B 95 125427 (2017)), we propose that the temperature dependence of the UCF in monolayer graphene can be interpreted by the WL theory.