Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias
Q. Shi, M. A. Zudov, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki,, and J. Smet

TL;DR
This study investigates how weak direct currents affect the magnetotransport properties of MgZnO/ZnO heterostructures, revealing quantum corrections to resistivity linked to electron distribution and scattering rates.
Contribution
It introduces a novel analysis of current-induced quantum corrections in MgZnO/ZnO heterostructures, connecting resistivity changes to electron distribution and scattering mechanisms.
Findings
Resistivity correction is proportional to current squared and Dingle factor.
Quantum correction is dominated by electron distribution modification.
Allows measurement of quantum and inelastic scattering rates.
Abstract
We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates.
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