Microwave-induced resistance oscillations in a back-gated GaAs quantum well
X. Fu, Q. A. Ebner, Q. Shi, M. A. Zudov, Q. Qian, and M. J. Manfra

TL;DR
This study demonstrates that microwave-induced resistance oscillations in a GaAs quantum well can effectively measure the electron effective mass, revealing its increase at lower densities and highlighting the method's sensitivity to electron-electron interactions.
Contribution
It provides the first direct measurement of effective mass variation with density using microwave-induced resistance oscillations in a tunable GaAs quantum well.
Findings
Effective mass increases as density decreases.
Microwave-induced resistance oscillations are sensitive to electron-electron interactions.
Method offers an accurate way to measure effective mass.
Abstract
We performed effective mass measurements employing microwave-induced resistance oscillation in a tunable-density GaAs/AlGaAs quantum well. Our main result is a clear observation of an effective mass increase with decreasing density, in general agreement with earlier studies which investigated the density dependence of the effective mass employing Shubnikov- de Haas oscillations. This finding provides further evidence that microwave-induced resistance oscillations are sensitive to electron-electron interactions and offer a convenient and accurate way to obtain the effective mass.
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