Coherent Atomically-Thin Superlattices with Engineered Strain

TL;DR

This paper demonstrates the creation of coherent, atomically-thin superlattices of transition metal dichalcogenides with engineered strain, enabling tunable optical properties and maintaining lattice coherence despite large mismatches.

Contribution

It introduces a novel omnidirectional epitaxy technique for growing dislocation-free superlattices with engineered strain at the monolayer scale.

Findings

Achieved lattice-matched superlattices with large lattice mismatches.

Demonstrated optical tuning with photoluminescence shifts up to 250 meV.

Provided theoretical models explaining coherent growth and strain effects.

Abstract

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically-thin superlattices, in which different transition metal dichalcogenide monolayers--despite large lattice mismatches--are repeated and integrated without dislocations. Grown by a novel omnidirectional epitaxy, these superlattices display fully-matched lattice constants across heterointerfaces while maintaining a surprisingly isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 meV. We present theoretical models to explain this coherent growth as well as the energetic interplay governing the flat-rippled configuration space in these strained monolayers. Such coherent superlattices provide novel building blocks with targeted functionalities at the atomically-thin monolayer limit.