Emergence, evolution, and control of multistability in a hybrid topological quantum/classical system

TL;DR

This paper introduces a hybrid quantum-classical system combining topological insulators and ferromagnets, revealing multistability and complex dynamics, with potential for low-power spintronic memory applications.

Contribution

It presents a novel hybrid system demonstrating multistability, bifurcations, and chaos, controlled by external voltage, advancing spintronics and quantum-classical hybrid research.

Findings

Multistability is ubiquitous in the hybrid system.

External voltage controls the degree of multistability.

Potential for low-power spintronic memory devices.

Abstract

We present a novel class of nonlinear dynamical systems - a hybrid of relativistic quantum and classical systems, and demonstrate that multistability is ubiquitous. A representative setting is coupled systems of a topological insulator and an insulating ferromagnet, where the former possesses an insulating bulk with topologically protected, dissipationless, and conducting surface electronic states governed by the relativistic quantum Dirac Hamiltonian and latter is described by the nonlinear classical evolution of its magnetization vector. The interactions between the two are essentially the spin transfer torque from the topological insulator to the ferromagnet and the local proximity induced exchange coupling in the opposite direction. The hybrid system exhibits a rich variety of nonlinear dynamical phenomena besides multistability such as bifurcations, chaos, and phase synchronization. The degree of multistability can be controlled by an external voltage. In the case of two coexisting states, the system is effectively binary, opening a door to exploitation for developing spintronic memory devices. Because of the dissipationless and spin-momentum locking nature of the surface currents of the topological insulator, little power is needed for generating a significant current, making the system appealing for potential applications in next generation of low power memory devices.