Large enhancement of the spin Hall effect in Au by scattering with side-jump on Ta impurities
P. Laczkowski, Y. Fu, H. Yang, J.-C. Rojas-S\'anchez, P. Noel, V.T., Pham, G. Zahnd, C. Deranlot, S. Collin, C. Bouard, P. Warin, V. Maurel, M., Chshiev, A. Marty, J.-P. Attan\'e, A. Fert, H. Jaffr\`es, L. Vila, and J.-M., George

TL;DR
This paper demonstrates a significant enhancement of the spin Hall effect in gold alloys doped with tantalum, primarily due to side-jump scattering, making them promising for spintronic applications.
Contribution
It reveals that Ta impurities induce a large spin Hall angle in gold alloys through side-jump scattering, a novel insight into impurity-driven SHE enhancement.
Findings
AuTa alloys achieve a spin Hall angle up to 0.5.
AuW alloys show a maximum spin Hall angle of 0.15.
AuTa alloys have moderate resistivity, suitable for spintronics.
Abstract
We present measurements of the Spin Hall Effect (SHE) in AuW and AuTa alloys for a large range of W or Ta concentrations by combining experiments on lateral spin valves and Ferromagnetic-Resonance/spin pumping technique. The main result is the identification of a large enhancement of the Spin Hall Angle (SHA) by the side-jump mechanism on Ta impurities, with a SHA as high as + 0.5 (i.e ) for about 10\% of Ta. In contrast the SHA in AuW does not exceed + 0.15 and can be explained by intrinsic SHE of the alloy without significant extrinsic contribution from skew or side-jump scattering by W impurities. The AuTa alloys, as they combine a very large SHA with a moderate resistivity (smaller than ), are promising for spintronic devices exploiting the SHE.
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