Tuning up or down the critical thickness in LaAlO3/SrTiO3 through in situ deposition of metal overlayers

TL;DR

This study investigates how metal overlayers influence the critical thickness for interfacial conductivity in LaAlO3/SrTiO3, revealing that metal work function and chemical interactions can modulate the formation of the quasi 2D electron system.

Contribution

It demonstrates that in situ metal capping can tune the critical LaAlO3 thickness for conductivity, integrating electrostatic and chemical effects for the first time.

Findings

Low work function metals induce q2DES at 1-2 uc of LaAlO3.

Noble metals increase the critical thickness above 4 uc.

Metal oxidation and defect formation affect interfacial properties.

Abstract

The quasi 2D electron system (q2DES) that forms at the interface between LaAlO3 and SrTiO3 has attracted much attention from the oxide electronics community. One of its hallmark features is the existence of a critical LaAlO3 thickness of 4 unit-cells (uc) for interfacial conductivity to emerge. In this paper, the chemical, electronic, and transport properties of LaAlO3/SrTiO3 samples capped with different metals grown in a system combining pulsed laser deposition, sputtering, and in situ X-ray photoemission spectroscopy are investigated. The results show that for metals with low work function a q2DES forms at 1-2 uc of LaAlO3 and is accompanied by a partial oxidation of the metal, a phenomenon that affects the q2DES properties and triggers the formation of defects. In contrast, for noble metals, the critical thickness is increased above 4 uc. The results are discussed in terms of a hybrid mechanism that incorporates electrostatic and chemical effects.