Machine learning the band gap properties of kesterite I$_2$-II-IV-V$_4$ quaternary compounds for photovoltaics applications
L. Weston, C. Stampfl

TL;DR
This study combines first-principles calculations and machine learning to accurately predict the band gap properties of kesterite I$_2$-II-IV-V$_4$ compounds, identifying promising solar absorber materials.
Contribution
It introduces machine learning models, especially support-vector regression and logistic regression, to predict band gap magnitude and nature with high accuracy, enabling rapid screening of new photovoltaic materials.
Findings
Achieved a root mean squared error of 283 meV in band gap prediction.
Predicted 717 compounds with suitable band gaps for solar applications.
Identified 25 synthesizable compounds with optimal band gaps in the 1.2-1.8 eV range.
Abstract
Kesterite I-II-IV-V semiconductors are promising solar absorbers for photovoltaics applications. The band gap and it's character, either direct or indirect, are fundamental properties determining photovoltaic-device efficiency. We use a combination of accurate first-principles calculations and machine learning to predict the properties of the band gap for a large number of kesterite I-II-IV-V semiconductors. In determining the magnitude of the fundamental gap, we compare results for a number of machine-learning models, and achieve a root mean squared error as low as 283 meV; the best results are achieved using support-vector regression with a radial-bias kernel. This error is well within the uncertainty of even the most advanced first-principles methods for calculating semiconductor band gaps. Predicting the direct--indirect property of the band gap is more challenging.…
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