Photoconductive response of strained silicon nanowires: A Monte Carlo study

TL;DR

This study uses Monte Carlo simulations to analyze the photoconductive response of strained silicon nanowires, revealing high responsivity and photoconductive gain, with detailed modeling of phonon interactions.

Contribution

It provides a novel Monte Carlo simulation approach to evaluate the photoconductive properties of strained silicon nanowires, including detailed phonon scattering effects.

Findings

Responsivity of 21.3 mA/W at 532 nm wavelength.

Photoconductive gain indicated by super-unity slope of 1.2.

Longitudinal optical phonons dominate carrier-phonon scattering.

Abstract

Using Ensemble Monte Carlo simulations the photocurrent in a 500nm long strained [110] silicon nanowire with diameter of 3.1 nm is investigated. It was observed that a phototransistor based on this nanowire can have responsivities in the order of 21.3 mA/W for an input light wavelength of 532 nm and intensity of 0.25-2.5 kW/cm2. The super-unity slope of 1.2 in photo conductance versus input light intensity suggests that the nanowire has a photoconductive gain and highlights its advantage over germanium nanowires with sub-unity slope (0.77). The generated photocurrents are in the 0.1 nA-1 nA range. Density Functional Theory (DFT) and Tight Binding (TB) methods were used for strain application and band structure calculation, respectively. Both longitudinal acoustic and optical phonons were included in the calculation of the carrier-phonon scattering events, which showed a two-order of magnitude stronger role for longitudinal optical phonons.