Predicting ground-state configurations and electronic properties of the thermoelectric clathrates Ba$_{8}$Al$_{x}$Si$_{46-x}$ and Sr$_{8}$Al$_{x}$Si$_{46-x}$
Maria Troppenz, Santiago Rigamonti, and Claudia Draxl

TL;DR
This study uses first-principles calculations and a cluster-expansion approach to predict ground states and electronic properties of Ba$_{8}$Al$_{x}$Si$_{46-x}$ and Sr$_{8}$Al$_{x}$Si$_{46-x}$ clathrates, revealing a metal-semiconductor transition at specific compositions.
Contribution
It introduces an efficient iterative cluster-expansion method combined with simulated annealing to predict ground states of complex thermoelectric clathrates.
Findings
Lattice constants increase linearly with Al content, matching experiments.
Configurations with x=16 exhibit a metal-semiconductor transition.
Ground states at x=16 have indirect band gaps of 0.36 eV and 0.30 eV.
Abstract
The structural and electronic properties of the clathrate compounds BaAlSi and SrAlSi are studied from first principles, considering an Al content between 6 and 16. Due to the large number of possible substitutional configurations we make use of a special iterative cluster-expansion approach, to predict ground states and quasi-degenerate structures in a highly efficient way. These are found from a simulated annealing technique where millions of configurations are sampled. For both compounds, we find a linear increase of the lattice constant with the number of Al substituents, confirming experimental observations for BaAlSi. Also the calculated bond distances between high-symmetry sites agree well with experiment for the full compositional range. For being below 16, all configurations are metallic for both materials.…
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