Ultrahigh capacitive energy storage in highly oriented BaZr(x)Ti(1-x)O3 thin films prepared by pulsed laser deposition

TL;DR

This study demonstrates that highly oriented BaZr(x)Ti(1-x)O3 thin films exhibit ultrahigh energy storage densities and low losses, making them promising for scalable, lead-free capacitive energy storage applications.

Contribution

The paper reports the fabrication and characterization of highly textured BaZr(x)Ti(1-x)O3 thin films with record-high energy densities and low dielectric losses for lead-free energy storage.

Findings

Achieved dielectric constants of 1400-3500 at 10 kHz.

Stored energy density up to 214 J/cm3.

Energy recovery efficiency of approximately 73%.

Abstract

We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric constant of ~1400 - 3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as high as 214 +/- 1 and 156 +/- 1 J/cm3, respectively, were demonstrated at a sustained high electric field of ~3 MV/cm with an efficiency of 72.8 +/- 0.6 % in optimum 30% Zr substituted BaTiO3 composition.