Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

TL;DR

This paper demonstrates room-temperature single-mode lasing in GaAsSb/GaAs nanowire superlattices with high quality factors, low thresholds, and tunable wavelengths, advancing nanoscale optoelectronic device development.

Contribution

It introduces a novel nanowire design with GaAsSb-based superlattices enabling efficient, tunable, and high-performance room-temperature lasing, a significant step forward in nanowire laser technology.

Findings

Achieved single-mode lasing from 890 nm to 990 nm at room temperature.

Lasing quality factor as high as 1250.

Reduced lasing threshold to ~6 kW/cm².

Abstract

Semiconductor nanowire lasers can produce guided coherent light emission with miniaturized geometry, bringing about new possibility for a variety of applications including nanophotonic circuits, optical sensing, and on-chip and chip-to-chip optical communications. Here, we report on the realization of single-mode room-temperature lasing from 890 nm to 990 nm utilizing a novel design of single nanowires with GaAsSb-based multiple superlattices as gain medium under optical pumping. The wavelength tunability with comprehensively enhanced lasing performance is shown to result from the unique nanowire structure with efficient gain materials, which delivers a lasing quality factor as high as 1250, a reduced lasing threshold ~ 6 kW cm-2 and a high characteristic temperature ~ 129 K. These results present a major advancement for the design and synthesis of nanowire laser structures, which can pave the way towards future nanoscale integrated optoelectronic systems with stunning performance.