Direct Detection of MeV-Scale Dark Matter Utilizing Germanium Internal Amplification for the Charge Created by the Ionization of Impurities
D.-M. Mei, G.-J. Wang, H. Mei, G. Yang, J. Liu, M. Wagner, R. Panth,, K. Kooi, Y.-Y. Li, W.-Z. Wei

TL;DR
This paper proposes a novel germanium detector with internal charge amplification at cryogenic temperatures, enabling detection of MeV-scale dark matter through ultra-low energy thresholds and high sensitivity to low-mass DM particles.
Contribution
It introduces a new detector design utilizing impurity ionization and internal amplification to detect low-mass dark matter with unprecedented sensitivity.
Findings
Achieves an energy threshold of ~0.1 eV for low-mass DM detection.
Projected sensitivity to DM-nucleon cross section of ~5×10^{-45} cm^2 at 10 MeV DM mass.
Projected sensitivity to DM-electron cross section of ~5×10^{-46} cm^2 at 1 MeV DM mass.
Abstract
Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature (4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of…
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