Weak dependence of phase fraction and dopant concentration in \{beta}, {\alpha} phase mixture of W
Avyaya J. Narasimham, Farheen N Sayed, Praneet Adusumilli, Steve, Novak, Vincent P. LaBella

TL;DR
This study investigates the relationship between dopant concentration and phase fractions in tungsten thin films, revealing weak dependence and non-uniform phase transformation behavior during annealing.
Contribution
It provides experimental evidence that dopant concentration has minimal impact on phase fraction in doped tungsten films, challenging prior assumptions.
Findings
Oxygen doped β W contains ~9% oxygen by SIMS.
Nitrogen doped β W has ~0.15% nitrogen, lower than predicted.
Phase transformation exhibits growth exponent <1, indicating non-uniform nucleation.
Abstract
Dopant concentration and , phase fraction is studied in doped W thin films. Oxygen doped W films are found to have 9.0~~0.9 at.\% of oxygen as measured from \ac{SIMS}. Whereas, nitrogen doped W films have 0.15~~0.02 at.\% of nitrogen, much lower than the theoretically predicted value of 11 at.\%. -W films partially phase transform to by annealing at 175~C, up to maximum time of 72 hours. Weak dependence between dopant concentration and phase fraction is observed in the annealed films. The growth exponent of the phase transformation was calculated to be 1 in both the films, indicating a non-uniform nucleation of the phase.
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Taxonomy
TopicsSolid-state spectroscopy and crystallography · Nonlinear Dynamics and Pattern Formation · Solidification and crystal growth phenomena
