Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K

TL;DR

This paper reports the development of Si-based GeSn lasers operating between 2 to 3 micrometers with temperatures up to 180 K, achieved through novel growth techniques for high Sn content alloys, advancing integrated mid-infrared photonics.

Contribution

The work introduces a new growth approach enabling high-quality GeSn alloys with 17.5% Sn, leading to efficient Si-based lasers with broad wavelength coverage and high operating temperatures.

Findings

Achieved GeSn lasers with 2-3 μm wavelength coverage.

Maximum lasing temperature of 180 K.

Sn incorporation exceeded previous limits for similar chemistries.

Abstract

A Si-based monolithic laser is highly desirable for full integration of Si-photonics. Lasing from direct bandgap group-IV GeSn alloy has opened a completely new venue from the traditional III-V integration approach. We demonstrated optically pumped GeSn lasers on Si with broad wavelength coverage from 2 to 3 {\mu}m. The GeSn alloys were grown using newly developed approaches with an industry standard chemical vapor deposition reactor and low-cost commercially available precursors. The achieved maximum Sn composition of 17.5% exceeded the generally acknowledged Sn incorporation limits for using similar deposition chemistries. The highest lasing temperature was measured as 180 K with the active layer thickness as thin as 260 nm. The unprecedented lasing performance is mainly due to the unique growth approaches, which offer high-quality epitaxial materials. The results reported in this work show a major advance towards Si-based mid-infrared laser sources for integrated photonics.