All-optical lithography process for contacting atomically-precise devices

TL;DR

This paper introduces an all-optical lithography method enabling electrical contact fabrication for atomically-precise silicon devices, simplifying the process and demonstrating its effectiveness through low-temperature transport measurements.

Contribution

It presents a novel all-optical lithography technique that integrates metal alignment marks and contacts directly on silicon donor devices made with STM.

Findings

Successful fabrication of electrical contacts using the new process

Verification of device functionality through low-temperature measurements

Process compatibility with atomic-precision silicon device fabrication

Abstract

We describe an all-optical lithography process that can be used to make electrical contact to atomic-precision donor devices made in silicon using scanning tunneling microscopy (STM). This is accomplished by implementing a cleaning procedure in the STM that allows the integration of metal alignment marks and ion-implanted contacts at the wafer level. Low-temperature transport measurements of a patterned device establish the viability of the process.