Isolation and Characterization of Few-layer Manganese Thiophosphite

TL;DR

This study explores the structural, magnetic, and electronic properties of few-layer MnPS$_3$, revealing its potential for spin/valleytronics applications through experimental characterization and liquid gating techniques.

Contribution

It provides detailed experimental insights into the structure, magnetic behavior, and electronic transport of few-layer MnPS$_3$, a novel 2D antiferromagnetic material.

Findings

Layer-dependent Raman fingerprints identified.

Magnetic susceptibility and parameters measured.

Ambipolar transport channels realized via liquid gating.

Abstract

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS$_3$ that couples the valley degree of freedom to a macroscopic antiferromagnetic order. The crystal structure of MnPS$_3$ is identified by high resolution scanning transmission electron microscopy. Layer dependent angle resolved polarized Raman fingerprints of the MnPS$_3$ crystal are obtained and the Raman peak at 383 cm$^{-1}$ exhibits 100% polarity. Temperature dependences of anisotropic magnetic susceptibility of MnPS$_3$ crystal are measured in superconducting quantum interference device. Magnetic parameters like effective magnetic moment, and exchange interaction are extracted from the mean field approximation mode. Ambipolar electronic transport channels in MnPS$_3$ are realized by the liquid gating technique. The conducting channel of MnPS$_3$ offers a unique platform for exploring the spin/valleytronics and magnetic orders in 2D limitation.