Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage
Steven Limpert, Adam Burke, I-Ju Chen, Nicklas Anttu, Sebastian, Lehmann, Sofia Fahlvik, Stephen Bremner, Gavin Conibeer, Claes Thelander,, Mats-Erik Pistol, Heiner Linke

TL;DR
This paper demonstrates a low-bandgap InAs nanowire hot carrier solar cell with tunable open-circuit voltage, surpassing traditional efficiency limits by using heterostructures as energy filters to harvest hot carriers effectively.
Contribution
It introduces a novel low-bandgap hot carrier solar cell design with tunable voltage using heterostructures, advancing the potential for higher efficiency solar energy conversion.
Findings
Achieved open-circuit voltage exceeding Shockley-Queisser limit.
Demonstrated tunability of photovoltage through heterostructure design.
Provided insights into realizing high-voltage hot carrier cells in low-bandgap materials.
Abstract
Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated "hot carriers" before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated…
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