Hybrid integration of solid-state quantum emitters on a silicon photonic chip

TL;DR

This paper presents a hybrid integration method combining solid-state quantum emitters with silicon photonic circuits, enabling scalable quantum photonic devices with high efficiency and precise emitter placement.

Contribution

The authors develop a pick-and-place technique for deterministic positioning of quantum dots on silicon chips and demonstrate efficient photon transfer and on-chip measurement capabilities.

Findings

Successful deterministic placement of quantum dots on silicon photonics

High-efficiency transfer of emission to waveguides

On-chip Hanbury-Brown and Twiss measurement performed

Abstract

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of pre-characterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.