Electron g-factor of valley states in realistic silicon quantum dots
Rusko Ruskov, Menno Veldhorst, Andrew S. Dzurak, Charles Tahan

TL;DR
This paper provides a theoretical model of the silicon quantum dot g-factor, revealing how interface-induced spin-orbit interactions influence spin qubit control and coherence, with implications for quantum computing.
Contribution
The paper introduces an almost fully analytic model of the silicon quantum dot g-factor considering interface symmetry and electric fields, highlighting spin-orbit effects on qubit manipulation.
Findings
g-factor depends on magnetic field direction and electric field
Identification of spin-qubit dephasing sweet spots
Electric field enables fast all-electric qubit control
Abstract
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quantum computation and spintronics. Our model is based on a modified effective mass approach with spin-valley boundary conditions, derived from the interface symmetry under presence of perpendicular to the interface electric field. The g-factor renormalization in the two lowest valley states is explained by the interface-induced spin-orbit 2D (3D) interaction, favoring intervalley spin-flip tunneling over intravalley processes. We show that the quantum dot level structure makes only negligible higher order effects to the g-factor. We calculate the g-factor as a function of the magnetic field direction, which is sensitive to the interface symmetry. We identify spin-qubit dephasing sweet spots at certain directions of the magnetic field, where the g-factor renormalization is zeroed: these…
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