Dopant-induced plasmon decay in graphene

TL;DR

This paper investigates how various dopants affect plasmon decay in graphene, revealing new damping channels and hybrid modes that depend on dopant type and layer number, with implications for tunable plasmonic devices.

Contribution

It provides a first-principles analysis of dopant-induced plasmon decay mechanisms in graphene, identifying new damping channels and hybrid modes.

Findings

Dopant-activated damping channels include out-of-plane graphene and in-plane dopant vibrations.

Electron transitions between graphene and dopant states contribute to plasmon decay.

Damping features strongly depend on dopant type and layer number.

Abstract

Chemically doped graphene could support plasmon excitations up to telecommunication or even visible frequencies. Apart from that, the presence of dopant may influence electron scattering mechanisms in graphene and thus impact the plasmon decay rate. Here I study from first principles these effects in single-layer and bilayer graphene doped with various alkali and alkaline earth metals. I find new dopant-activated damping channels: loss due to out-of-plane graphene and in-plane dopant vibrations, and electron transitions between graphene and dopant states. The latter excitations interact with the graphene plasmon and together they form a new hybrid mode. The study points out a strong dependence of these features on the type of dopants and the number of layers, which could be used as a tuning mechanism in future graphene-based plasmonic devices.