Oxygen Partial Pressure during Pulsed Laser Deposition: Deterministic Role on Thermodynamic Stability of Atomic Termination Sequence at SrRuO3/BaTiO3 Interface
Yeong Jae Shin, Lingfei Wang, Yoonkoo Kim, Ho-Hyun Nahm Daesu Lee,, Jeong Rae Kim, Sang Mo Yang, Jong-Gul Yoon, Jin-Seok Chung, Miyoung Kim, Seo, Hyoung Chang, Tae Won Noh

TL;DR
This study demonstrates that controlling oxygen partial pressure during pulsed laser deposition enables precise engineering of atomic termination sequences at oxide interfaces, crucial for device miniaturization.
Contribution
It reveals the thermodynamic role of oxygen partial pressure in determining surface termination, enabling deliberate atomic stacking control in oxide heterostructures.
Findings
Lowering PO2 to 5 mTorr achieves uniform SrO-TiO2 termination.
Surface thermodynamic stability influences termination formation.
Control over oxygen pressure enables atomic-scale interface engineering.
Abstract
With recent trends on miniaturizing oxide-based devices, the need for atomic-scale control of surface/interface structures by pulsed laser deposition (PLD) has increased. In particular, realizing uniform atomic termination at the surface/interface is highly desirable. However, a lack of understanding on the surface formation mechanism in PLD has limited a deliberate control of surface/interface atomic stacking sequences. Here, taking the prototypical SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) heterostructure as a model system, we investigated the formation of different interfacial termination sequences (BaO-RuO2 or TiO2-SrO) with oxygen partial pressure (PO2) during PLD. We found that a uniform SrO-TiO2 termination sequence at the SRO/BTO interface can be achieved by lowering the PO2 to 5 mTorr, regardless of the total background gas pressure (Ptotal), growth mode, or growth rate. Our results…
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