Observation of Giant Exchange Bias and Topological Hall Effect in Manganese Nitride Films

TL;DR

This study reports the observation of giant exchange bias and topological Hall effect in manganese nitride films, revealing complex magnetic interactions and topological spin textures that could be exploited in spintronic devices.

Contribution

It demonstrates the coexistence of giant exchange bias and topological Hall effect in manganese nitride films, highlighting the role of phase interfaces and competing magnetic interactions.

Findings

Exchange bias reaches ~0.22 T at 5 K.

Topological Hall effect observed below 75 K.

Presence of noncollinear spins at phase interfaces.

Abstract

Magnetic and magneto-transport properties of manganese nitride films grown by molecular beam epitaxy have been investigated. Due to the mixed ferrimagnetic (FI) phase (${\epsilon}$-phase with TFI ~ 738 K) and the antiferromagnetic phase (${\zeta}$-phase with TN ~ 273 K), we observe magnetization hysteresis loops with non-zero exchange bias below TN, reaching ~ 0.22 T at 5 K. This indicates that noncollinear spins exist at the interfaces between two phases, creating a competition between interfacial Dzyaloshinskii-Moriya (DM) and exchange interactions. Strikingly, in addition to the normal Hall effect by Lorentz force and anomalous Hall effect by magnetization, we observe new contribution namely topological Hall effect below 75 K. This verifies the existence of topological spin texture, which is the consequence of competing interactions controlled by both applied field and temperature. Our work demonstrates that spintronic devices may be fabricated exploiting rich magnetic properties of different phases.