Single atom manipulation and control in a scanning transmission electron microscope

TL;DR

This paper shows how a scanning transmission electron microscope can precisely manipulate individual atoms in graphene, enabling atom-by-atom nanofabrication and atomic-level chemical studies.

Contribution

It introduces a method for controlled manipulation of single atoms and defects in graphene using STEM, advancing atomic-scale fabrication techniques.

Findings

Controlled passivation of vacancy defects with Si atoms

Directed movement of Si defects within graphene lattice

Potential for atomic-level nanofabrication and chemical studies

Abstract

We demonstrate that the sub-atomically focused beam of a scanning transmission electron microscope (STEM) can be used to controllably manipulate individual dopant atoms in a 2D graphene lattice. We demonstrate the manipulation of adsorbed source materials and the graphene lattice with the electron beam such that individual vacancy defects can be controllably passivated by Si substitutional atoms. We further demonstrate that these Si defects may be directed through the lattice via e-beam control or modified (as yet, uncontrollably) to form new defects which can incorporate new atoms into the graphene lattice. These studies demonstrate the potential of STEM for atom-by-atom nanofabrication and fundamental studies of chemical reactions in 2D materials on the atomic level.