Proximity-effect-induced Superconducting Gap in Topological Surface States - A Point Contact Spectroscopy Study of NbSe2/Bi2Se3 Superconductor-Topological Insulator Heterostructures
Wenqing Dai, Anthony Richardella, Renzhong Du, Weiwei Zhao, Xin Liu,, C.X. Liu, Song-Hsun Huang, Raman Sankar, Fangcheng Chou, Nitin Samarth, and, Qi Li

TL;DR
This study used point contact spectroscopy to observe proximity-effect-induced superconducting gaps in Bi2Se3 topological insulator films on NbSe2, revealing both bulk and surface state superconductivity with thickness-dependent features.
Contribution
First direct spectroscopic evidence of proximity-induced superconducting gaps in both bulk and surface states of Bi2Se3 on NbSe2, highlighting the role of layer thickness.
Findings
Superconducting gap in Bi2Se3 decreases with increasing layer thickness.
A second, smaller gap appears at very low temperatures, possibly in surface states.
Gaps are consistent with ARPES measurements of surface and bulk superconductivity.
Abstract
Proximity-effect-induced superconductivity was studied in epitaxial topological insulator Bi2Se3 thin films grown on superconducting NbSe2 single crystals. A point contact spectroscopy (PCS) method was used at low temperatures down to 40 mK. An induced superconducting gap in Bi2Se3 was observed in the spectra, which decreased with increasing Bi2Se3 layer thickness, consistent with the proximity effect in the bulk states of Bi2Se3 induced by NbSe2. At very low temperatures, an extra point contact feature which may correspond to a second energy gap appeared in the spectrum. For a 16 quintuple layer Bi2Se3 on NbSe2 sample, the bulk state gap value near the top surface is ~ 159 {\mu}eV, while the second gap value is ~ 120 {\mu}eV at 40 mK. The second gap value decreased with increasing Bi2Se3 layer thickness, but the ratio between the second gap and the bulk state gap remained about the…
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