Sub-Nanometer Channels Embedded in Two-Dimensional Materials

TL;DR

This paper demonstrates the synthesis of sub-nanometer-wide MoS2 channels embedded in WSe2 monolayers, offering a new approach for atomic-scale electronic device components with potential for carrier confinement and charge separation.

Contribution

It introduces a dislocation-catalyzed method to create coherent 1D MoS2 channels within 2D WSe2, expanding the possibilities for nanoscale electronic structures.

Findings

Successful synthesis of sub-nanometer MoS2 channels in WSe2.

Channels have coherent interfaces with the 2D matrix.

Simulations suggest other 2D material combinations for 1D channels.

Abstract

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometer-wide 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offer the promise of carrier confinement in a direct-gap material and charge separation needed to access the ultimate length scales necessary for future electronic applications.