Transparent perovskite barium stannate with high electron mobility and thermal stability

TL;DR

This paper reviews recent advances in doped BaSnO3, a transparent oxide semiconductor with high electron mobility and thermal stability, highlighting its potential for optoelectronic devices and quantum phenomena exploration.

Contribution

It provides a comprehensive overview of the physical properties, doping strategies, and device demonstrations of BaSnO3, along with pathways to realize 2D electron gases and quantum states.

Findings

High electron mobility in doped BaSnO3

Successful demonstration of pn diodes and FETs

Potential for quantum state observation at heterointerfaces

Abstract

Transparent conducting oxides (TCOs) and transparent oxide semiconductors (TOSs) have become necessary materials for a variety of applications in the information and energy technologies, ranging from transparent electrodes to active electronics components. Perovskite barium stannate (BaSnO3), a new TCO or TOS system, is a potential platform for realizing optoelectronic devices and observing novel electronic quantum states due to its high electron mobility, excellent thermal stability, high transparency, structural versatility, and flexible doping controllability at room temperature. This article reviews recent progress in the doped BaSnO3 system, discussing the wide physical properties, electron-scattering mechanism, and demonstration of key semiconducting devices such as pn diodes and field-effect transistors. Moreover, we discuss the pathways to achieving two-dimensional electron gases at the interface between BaSnO3 and other perovskite oxides and describe remaining challenges for observing novel quantum phenomena at the heterointerface.