Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials

TL;DR

This study investigates how noble gas ion irradiation creates and influences defects in monolayer graphene and MoS₂, revealing substrate effects and defect size variations using Raman spectroscopy and modeling.

Contribution

It provides a detailed analysis of defect sizes and yields in supported versus freestanding 2D materials under ion irradiation, highlighting substrate influence and comparing different ion species.

Findings

Defect sizes are smaller in supported graphene than freestanding.

Secondary substrate atoms significantly increase defect production.

Ion species affect defect yields and interaction with 2D materials.

Abstract

Precise and scalable defect engineering of 2D nanomaterials is acutely sought-after in contemporary materials science. Here we present defect engineering in monolayer graphene and molybdenum disulfide (MoS$_2$) by irradiation with noble gas ions at 30 keV. Two ion species of different masses were used in a gas field ion source microscope: helium (He$^+$) and neon (Ne$^+$). A detailed study of the introduced defect sizes and resulting inter-defect distance with escalating ion dose was performed using Raman spectroscopy. Expanding on existing models, we found that the average defect size is considerably smaller for supported than freestanding graphene and that the rate of defect production is larger. We conclude that secondary atoms from the substrate play a significant role in defect production, creating smaller defects relative to those created by the primary ion beam. Furthermore, a similar model was also applied to supported MoS$_2$, another promising member of the 2D material family. Defect yields for both ions were obtained for MoS$_2$, demonstrating their different interaction with the material and facilitating comparison with other irradiation conditions in the literature.