Junction-less nanowire based photodetector: Role of nanowire width
Anita Fadavi Roudsari, Iman Khodadadzadeh, Nixon O, Simarjeet S., Saini, and M. P. Anantram

TL;DR
This study demonstrates that narrower nanowires in a junction-less photodetector enhance photocurrent without increasing dark current, highlighting the importance of nanowire width in device performance.
Contribution
The paper introduces a junction-less nanowire photodetector with controlled nanowire width, showing improved photocurrent performance through nanowire width optimization.
Findings
Narrower nanowires produce larger photocurrents.
Dark current remains unchanged with nanowire width variation.
Photocurrent increases as nanowire width decreases.
Abstract
Enhanced photocurrent is demonstrated in a junction-less photodetector with nanowires embedded in its channel. The fabricated photodetector consists of a large area for efficient absorption of incident light with energy band engineering achieved in nanowires. The structure design consists of a set of two symmetrically positioned gates, primary and secondary, that are located over the nanowires. Each gate is used for biasing and control of the charge flow. We find that detectors with narrower nanowires controlled by their secondary gate generate larger photocurrents under similar illumination conditions. Our results show that while the dark current remains the same, the photocurrent increases as the nanowire width decreases.
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Taxonomy
TopicsNanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Advanced Semiconductor Detectors and Materials
