Interaction between counter-propagating quantum Hall edge channels in the 3D topological insulator BiSbTeSe$_2$

TL;DR

This study investigates the quantum Hall effect in the topological insulator BiSbTeSe$_2$, revealing how electric fields can tune Landau levels and induce counter-propagating edge channels with measurable non-integer conductance.

Contribution

It demonstrates the tunability of Landau levels in BiSbTeSe$_2$ and the resulting counter-propagating edge channels, highlighting the role of scattering in quantum Hall conductance quantization.

Findings

Counter-propagating edge channels are realized in BiSbTeSe$_2$.

Non-integer quantum Hall conductance is observed under weak scattering.

Electric fields enable independent tuning of top and bottom surface states.

Abstract

The quantum Hall effect is studied in the topological insulator BiSbTeSe$_2$. By employing top- and back-gate electric fields at high magnetic field, the Landau levels of the Dirac cones in the top and bottom topological surface states can be tuned independently. When one surface is tuned to the electron-doped side of the Dirac cone and the other surface to the hole-doped side, the quantum Hall edge channels are counter-propagating. The opposite edge mode direction, combined with the opposite helicities of top and bottom surfaces, allows for scattering between these counter-propagating edge modes. The total Hall conductance is integer valued only when the scattering is strong. For weaker interaction, a non-integer quantum Hall effect is expected and measured.