Single-atom transistor as a precise magnetic field sensor

TL;DR

This paper proposes a scheme using a single-atom transistor to achieve ultra-precise magnetic field sensing, reaching a sensitivity of 10^{-5}G by leveraging scattering resonances and quantum measurement protocols.

Contribution

It introduces a novel method for magnetic field sensing with single atoms, achieving quantum-limited precision using scattering resonances and simple measurement protocols.

Findings

Achieves magnetic field sensitivity of 10^{-5}G with a single atom pair.

Demonstrates saturation of the quantum precision bound in the proposed setup.

Provides a practical scheme for ultra-precise magnetic field measurement using ultracold atoms.

Abstract

Feshbach resonances, which allow for tuning the interactions of ultracold atoms with an external magnetic field, have been widely used to control the properties of quantum gases. We propose a~scheme for using scattering resonances as a probe for external fields, showing that by carefully tuning the parameters it is possible to reach a $10^{-5}$G (or nT) level of precision with a single pair of atoms. We show that for our collisional setup it is possible to saturate the quantum precision bound with a simple measurement protocol.