Exploring the origins of the Dzyalloshinski-Moria interaction in MnSi
Chetan Dhital, Lisa DeBeer-Schmitt, Qiang Zhang, Weiwei Xie, David P., Young, John F. DiTusa

TL;DR
This study investigates how increased carrier density and spin-orbit interaction influence the magnetic properties and Dzyalloshinski-Moria interaction in MnSi-based systems, revealing electronic structure as a key factor.
Contribution
It demonstrates that magnetic behavior and DM interaction strength in MnSi systems depend mainly on electron count rather than atomic mass or size of substituents.
Findings
Magnetic properties vary systematically with electron count.
DM interaction strength correlates with carrier density.
Electronic structure models effectively describe the system.
Abstract
By using magnetization and small-angle neutron scattering (SANS) measurements, we have investigated the magnetic behavior of Mn_{1-x}Ir_{x}Si system to explore the effect of increased carrier density and spin-orbit interaction on the magnetic properties of MnSi. We determine estimates of the spin wave stiffness and the Dzyalloshinski-Moria, DM, interaction strength and compare with Mn_{1-x}Co_{x}Si and Mn_{1-x}Fe_{x}Si. Despite the large differences in atomic mass and size of the substituted elements, Mn_{1-x}Co_{x}Si and Mn_{1-x}Ir_{x}Si show nearly identical variations in their magnetic properties with substitution. We find a systematic dependence of the transition temperature, the ordered moment, the helix period and the DM interaction strength with electron count for Mn{1-x}Ir{x}Si, Mn_{1-x}Co_{x}Si, and Mn_{1-x}Fe_{x}Si indicating that the magnetic behavior is primarily dependent…
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