Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot
Xinyu Zhao, Xuedong Hu

TL;DR
This paper explores methods to achieve high-fidelity electron spin transport in GaAs double quantum dots by analyzing spin relaxation, non-adiabatic transitions, and phase errors, providing practical guidance for experimental implementation.
Contribution
It offers a comprehensive analysis of spin relaxation, Landau-Zener transitions, and phase errors, proposing strategies to optimize high-fidelity spin transport in GaAs double quantum dots.
Findings
Identified parameter regimes to avoid spin hot spots.
Proposed a scheme leveraging Landau-Zener-Stückelberg interference for faster, high-fidelity transport.
Estimated phase errors due to double-dot corrections on the g-factor.
Abstract
In this paper, we investigate how to achieve high-fidelity electron spin transport in a GaAs double quantum dot. Our study examines spin transport from multiple perspectives. We first study how a double dot potential may affect/accelerate spin relaxation. We calculate spin relaxation rate in a wide range of experimental parameters and focus on the occurrence of spin hot spots. A safe parameter regime is identified in order to avoid these spin hot spots. We also study the non-adiabatic transitions in the Landau-Zener process of sweeping the interdot detuning, and propose a scheme to take advantage of possible Landau-Zener-St\"{u}kelburg interference to achieve high-fidelity spin transport at a higher speed. Finally, we calculate the double-dot correction on the effective -factor for the tunneling electron, and estimate the resulting phase error between different spin states. Our…
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Taxonomy
TopicsQuantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
