Silicon PIN diodes as Neganov-Trofimov-Luke cryogenic light detectors
X. Defay, E. Mondragon, J.-C. Lanfranchi, A. Langenkamper, A. Munster,, W. Potzel, S. Schonert, S. Wawoczny, M. Willers

TL;DR
This paper discusses the development of silicon PIN diode-based cryogenic light detectors utilizing the Neganov-Trofimov-Luke effect to enhance charge collection and improve sensitivity for rare event searches.
Contribution
It introduces an optimized electric field configuration in silicon PIN diodes to improve charge collection in NTLE-based cryogenic light detectors.
Findings
Enhanced charge collection efficiency achieved
Improved detector sensitivity demonstrated
Potential for better rare event detection
Abstract
Cryogenic rare event searches based on heat and light composite calorimeters have a common need for large area photon detectors with high quantum efficiency, good radiopurity and high sensitivity. By employing the Neganov-Trofimov-Luke effect (NTLE), the phonon signal of particle interactions in a semiconductor absorber operated at cryogenic temperatures can be amplified by drifting the photogenerated electrons and holes in an electric field. We present here the last results of a Neganov-Trofimov-Luke effect light detector with an electric field configuration optimized to improve the charge collection within the absorber.
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