Photo-induced blinking in a solid state quantum system

TL;DR

This paper investigates a unique photo-induced blinking phenomenon in gallium nitride single photon emitters, revealing how laser activation modifies transition kinetics and affects photon emission stability.

Contribution

It uncovers the mechanism behind laser-induced blinking in GaN SPEs by analyzing transition kinetics and trap states, advancing understanding of solid-state quantum emitter dynamics.

Findings

Blinking caused by laser-activated states in GaN SPEs

Power-dependent decay rates influence blinking behavior

Photon statistics reveal trap state dynamics

Abstract

Solid state single photon emitters (SPEs) are one of the prime components of many quantum nanophotonics devices. In this work, we report on an unusual, photo-induced blinking phenomenon of SPEs in gallium nitride (GaN). This is shown to be due to the modification in the transition kinetics of the emitter, via the introduction of additional laser-activated states. We investigate and characterize the blinking effect on the brightness of the source and the statistics of the emitted photons. Combining second-order correlation and fluorescence trajectory measurements, we determine the photo-dynamics of the trap states and characterize power dependent decay rates and characteristic off-time blinking. Our work sheds new light into understanding solid-state quantum system dynamics and, specifically, power-induced blinking phenomena in SPEs.