Spin switching via quantum dot spin valves

TL;DR

This paper presents a theoretical model for spin transport in quantum-dot spin valves, showing how strong correlations enable voltage-controlled magnetic switching and readout of magnetic states.

Contribution

It introduces a comprehensive theory accounting for strong correlations, demonstrating voltage control of magnetization and potential experimental realizations.

Findings

Voltage-controlled magnetic switching enabled by strong correlations.

Electrical resistance can read magnetic states.

The model applies to various experimental systems.

Abstract

We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate that, as a result of these strong correlations, the dot gate voltage enables control over the current-induced torques on the magnets, and, in particular, enables voltage-controlled magnetic switching. The electrical resistance of the structure can be used to read out the magnetic state. Our model may be realized by a number of experimental systems, including magnetic scanning-tunneling microscope tips and artificial quantum dot systems.