Hole spin resonance and spin-orbit coupling in a silicon metal-oxide-semiconductor field-effect transistor

TL;DR

This paper investigates hole spin resonance in silicon MOSFETs, revealing complex spin-orbit interactions and quantum state mixing, with experimental results aligning with theoretical models.

Contribution

It provides the first detailed experimental characterization of hole spin resonance and spin-orbit coupling effects in silicon MOSFETs, including anti-crossings and multi-photon resonances.

Findings

Observation of a double dot in the channel via source-drain current

Detection of spin-orbit-induced anti-crossing in the resonance spectra

Suppressed spin resonance signals at the anti-crossing due to quantum state mixing

Abstract

We study hole spin resonance in a p-channel silicon metal-oxide-semiconductor field-effect transistor. In the sub-threshold region, the measured source-drain current reveals a double dot in the channel. The observed spin resonance spectra agree with a model of strongly coupled two-spin states in the presence of a spin-orbit-induced anti-crossing. Detailed spectroscopy at the anti-crossing shows a suppressed spin resonance signal due to spin-orbit-induced quantum state mixing. This suppression is also observed for multi-photon spin resonances. Our experimental observations agree with theoretical calculations.