# Optimal charge-to-spin conversion in graphene on transition metal dichalcogenides

## TL;DR

This paper demonstrates that graphene on transition metal dichalcogenides exhibits a highly efficient, robust charge-to-spin conversion via the inverse spin galvanic effect, especially near the spin minority band, with potential room temperature applications.

## Contribution

It introduces a figure of merit for charge-to-spin conversion efficiency and shows near-unity efficiency close to the spin minority band in graphene on TMD monolayers.

## Key findings

- Charge-to-spin conversion efficiency approaches unity near the spin minority band.
- Efficiency remains large and robust against disorder at room temperature.
- Efficiency decays algebraically at high electronic densities despite opposite spin helicities.

## Abstract

When graphene is placed on a monolayer of semiconducting transition metal dichalcogenide (TMD) its band structure develops rich spin textures due to proximity spin-orbital effects with interfacial breaking of inversion symmetry. In this work, we show that the characteristic spin winding of low-energy states in graphene on TMD monolayer enables current-driven spin polarization known as the inverse spin galvanic effect (ISGE). By introducing a proper figure of merit, we quantify the efficiency of charge-to-spin conversion and show it is close to unity when the Fermi level approaches the spin minority band. Remarkably, at high electronic density, even though sub-bands with opposite spin helicities are occupied, the efficiency decays only algebraically. The giant ISGE predicted for graphene on TMD monolayer is robust against disorder and remains large at room temperature.