Quantum linear magnetoresistance in NbTe2
Hongxiang Chen, Zhilin Li, Xiao Fan, Liwei Guo, Xiaolong Chen

TL;DR
This study investigates the anisotropic magneto-transport properties of NbTe2, revealing a significant quantum linear magnetoresistance linked to its unique electronic structure, including a large quasi-2D Fermi surface and small Fermi pockets.
Contribution
It provides the first detailed analysis of quantum linear magnetoresistance in NbTe2 and compares its electronic structure evolution with TaTe2.
Findings
Observed linear magnetoresistance up to 30% at 3 K in 9 T
Identified coexistence of large quasi-2D Fermi surface and small Fermi pockets
Supported quantum linear magnetoresistance model explanation
Abstract
NbTe2 crystal is quasi-2D layered semimetal with charge density wave ground state showing a distorted-1T structure at room temperature. Here we report the anisotropic magneto-transport properties of NbTe2. An anomalous linear magnetoresistance up to 30% at 3 K in 9 T was observed, which can be well explained by quantum linear magnetoresistance model. Our results reveal that a large quasi-2D Fermi surface and small Fermi pockets with linearly dispersive bands coexist in NbTe2. The comparison with the isostructural material TaTe2 provides more information about the electronic structure evolution with charge density wave transitions in NbTe2 and TaTe2.
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