# Oxide-mediated self-limiting recovery of field effect mobility in   plasma-treated MoS$_2$

**Authors:** Jakub Jadwiszczak, Colin O'Callaghan, Yangbo Zhou, Daniel S. Fox,, Eamonn Weitz, Darragh Keane, Ian O'Reilly, Clive Downing, Aleksey Shmeliov,, Pierce Maguire, John J. Gough, Cormac McGuinness, Mauro S. Ferreira, A., Louise Bradley, John J. Boland, Valeria Nicolosi, Hongzhou Zhang

arXiv: 1706.08573 · 2019-01-01

## TL;DR

This study demonstrates that oxygen plasma treatment can be used to precisely tune and enhance the electrical properties of MoS₂ by forming a beneficial 2D MoO₃ phase, challenging previous assumptions about plasma damage.

## Contribution

The paper reveals that controlled oxygen plasma treatment induces a 2D MoO₃ phase in MoS₂, leading to improved mobility and conductivity, providing new insights into 2D material modification.

## Key findings

- Oxygen plasma treatment enhances MoS₂ electrical performance.
- Formation of 2D MoO₃ phase improves conductivity.
- Theoretical models confirm the beneficial role of MoO₃.

## Abstract

Precise tunability of electronic properties of 2D nanomaterials is a key goal of current research in this field of materials science. Chemical modification of layered transition metal dichalcogenides leads to the creation of heterostructures of low-dimensional variants of these materials. In particular, the effect of oxygen-containing plasma treatment on molybdenum disulfide (MoS$_2$) has long been thought to be detrimental to the electrical performance of the material. Here we show that the mobility and conductivity of MoS$_2$ can be precisely controlled and improved by systematic exposure to oxygen:argon plasma, and characterise the material utilising advanced spectroscopy and microscopy. Through complementary theoretical modelling which confirms conductivity enhancement, we uncover the role of a two-dimensional phase of molybdenum trioxide (2D-MoO$_3$) in improving the electronic behaviour of the material. Deduction of the beneficial role of MoO$_3$ will serve to open the field to new approaches with regard to the tunability of 2D semiconductors by their low-dimensional oxides in nano-modified heterostructures.

## Full text

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## Figures

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## References

50 references — full list in the complete paper: https://tomesphere.com/paper/1706.08573/full.md

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Source: https://tomesphere.com/paper/1706.08573