# Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures

## TL;DR

This study demonstrates gate-tunable resonant tunneling and negative differential resistance in double bilayer graphene-WSe2 heterostructures, achieving high current densities and sharp resonances at room temperature and low temperature.

## Contribution

It provides the first detailed experimental and theoretical analysis of coherent interlayer tunneling in aligned bilayer graphene-WSe2 heterostructures with high current densities.

## Key findings

- High interlayer current densities of 2-2.5 μA/μm² at room temperature and 1.5 K.
- Resonant tunneling peaks with ratios up to 6.
- Excellent agreement between theory and experiment indicating momentum-conserving tunneling.

## Abstract

We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively.

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Source: https://tomesphere.com/paper/1706.08034