# The perfect spin injection in silicene FS/NS junction

## TL;DR

This paper demonstrates a method for pure spin injection in silicene FS/NS junctions by tuning Fermi energies and electric fields, enabling control over spin and valley polarities for spintronics and valleytronics applications.

## Contribution

It introduces a theoretical approach to achieve pure spin injection and control valley polarization in silicene-based devices using Fermi energy tuning and electric fields.

## Key findings

- Pure spin injection is achievable by Fermi energy tuning.
- Valley polarity can be controlled by perpendicular electric field.
- Potential applications in spintronics and valleytronics devices.

## Abstract

We theoretically investigate the spin injection from a ferromagnetic silicene to a normal silicene (FS/NS), where the magnetization in the FS is assumed from the magnetic proximity effect. Based on a silicene lattice model, we demonstrated that the pure spin injection could be obtained by tuning the Fermi energy of two spin species, where one is in the spin orbit coupling gap and the other one is outside the gap. Moreover, the valley polarity of the spin species can be controlled by a perpendicular electric field in the FS region. Our findings may shed light on making silicene-based spin and valley devices in the spintronics and valleytronics field.