# Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

## TL;DR

This study investigates magnetotransport properties in heterostructures of transition metal dichalcogenides and graphene, revealing effects like weak antilocalization and quantum oscillations, with mobility enhancements and boundary scattering effects.

## Contribution

It demonstrates fabrication of high-mobility heterostructures and analyzes their magnetotransport behavior, highlighting the transition from diffusive to quasiballistic regimes and associated phenomena.

## Key findings

- Observation of weak antilocalization in certain heterostructures.
- Mobility up to 120,000 cm^2/Vs in encapsulated samples.
- Detection of complete spin and valley degeneracy lifting in quantum oscillations.

## Abstract

We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was deposited. For graphene/WSe$_2$/SiO$_2$ samples we observe mobilities of $\sim$12 000 cm$^2$/Vs. Magnetic field dependent resistance measurements on these samples show a peak in the conductivity at low magnetic field. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe$_2$(WS$_2$) and hBN show a much higher mobility of up to $\sim$120 000 cm$^2$/Vs. However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic field a resistance peak appears, which we ascribe to a size effect, due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors, due to complete lifting of the spin and valley degeneracy.