# Migration of Mg and other interstitial metal dopants in GaN

## TL;DR

This study uses density functional calculations to analyze how magnesium and other interstitial metal dopants migrate in GaN, revealing their diffusion pathways, barriers, and dependence on size and charge.

## Contribution

It provides detailed migration energy barriers for Mg, Li, Na, and Be in GaN, highlighting the effects of dopant size and charge on diffusion behavior.

## Key findings

- Mg diffuses isotropically with a barrier of 2.1 eV.
- Be shows anisotropic diffusion with barriers of 0.76 and 1.88 eV.
- The Mg migration barrier aligns with experimental estimates.

## Abstract

The minimum energy paths for the migration of interstitial Mg in wurtzite GaN are studied through density functional calculations. The study also comprises Li, Na, and Be dopants to examine the dependence on size and charge of the dopant species. In all cases considered, the impurities diffuse like ions without any tendency of localizing charge. Li, Mg, and to some extent Na, diffuse almost isotropically in GaN, with average diffusion barriers of 1.1, 2.1, and 2.5 eV, respectively. Instead Be shows a marked anisotropy with energy barriers of 0.76 and 1.88 eV for diffusion paths perpendicular and parallel to the c-axis. The diffusion barrier generally increases with ionic charge and ionic radius, but their interplay is not trivial. The calculated migration barrier for Mg is consistent with the values estimated in a recent beta- emission channeling experiment.